tj , l) n.c. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUV47, BUV47a npn silicon power transistors rugged triple-diffused planar construction 9 a continuous collector current 1000 volt blocking capability b c sot-92 (to c c t c package p view) 1 3 \ / pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25c case temperature (unless otherwise noted) rating collector-emitter voltage (vbe = -2.5 v) collector-emitter voltage (rbe = 10 fi) collector-emitter voltage (ib = 0) BUV47 BUV47a BUV47 BUV47a BUV47 BUV47a continuous collector current peak collector current (see note 1 ) continuous base current peak base current continuous device dissipation at (or below) 25c case temperature operating junction temperature range storage temperature range symbol vcex vcer vceo ic 'cm ib 'bm ptot tj ts,g value 850 1000 850 1000 400 450 9 15 3 6 120 -65to+150 -65 to +150 unit v v v a a a a w c c note 1: this value applies for tp < 5 ms, duty cycle < 2%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BUV47, BUV47a npn silicon power transistors electrical characteristics at 25c case temperature (unless otherwise noted) parameter collector-emitter ceo(sus) sustaining v0|tage base-emitter (br)ebo breakdown voltage collector-emitter ces cut-off current collector-emitter 'cer cut-off current emitter cut-off 'ebo current collector-emitter ce(sat) saturation voltage base-emitter be(sat) saturation voltage current gain ' bandwidth product cob output capacitance test conditions BUV47 lc = 200 ma 1 = 25 mh (see note 2) ie = 50 ma lc = 0 (see note 3) vce = 850v vbe = 0 BUV47 vce = 1000v v6e = 0 BUV47a vce= 850v vbe = 0 tc = 125c BUV47 vce = 1 000 v vbe = 0 tc = 1 25"c BUV47a vce= 850v rbe = 10q BUV47 vce = 1000v rbe = 10n BUV47a vce= 850v rbe = 10n tc = 125c BUV47 vce = 1 000 v rbe = 1 0 o tc = 1 25c BUV47a veb = 5v lc = 0 !;: 2.5 a i:: i" ^??*??v ib = 1 a lc = 5 a (see notes 3 and 4) vce = 10v lc= 0.5 a f= 1 mhz vcb= 20v lc = 0 f = 0.1 mhz win 400 450 7 typ 8 105 max 30 0.15 0.15 1.5 1.5 0.4 0.4 3.0 3.0 1 1.5 3.0 1.6 unit v v ma ma ma v v mhz pf notes: 2. inductive loop switching measurement. 3. these parameters must be measured using pulse techniques, tp = 300 us, duty cycle < 2%. 4. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics parameter rejc junction to case thermal resistance min typ max 1 unit "c/w resistive-load-switching characteristics at 25c case temperature parameter ton turn on time is storage time tf fall time test conditions t v - 150 v (see figures 1 and 2) min typ max 1.0 3.0 0.8 unit us us us * voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 25c case temperature (unless otherwise noted) parameter tsv voltage storage time if, current fall time test conditions t ic = 5a ib(0n) = ia vbe(off) = -5v tc = 100c (see figures 3 and 4) min typ max 4.0 0.4 unit us us
BUV47, BUV47a npn silicon power transistors parameter measurement information +25 v tp = 20 us duty cycle = 1 % v-) = 15 v, source impedance = 50 a figure 1. resistive-load switching test circuit a-b = td b - c = tr e-f = t, d - e = ts a-c = ton d - f = toff c-f-90% 90%-ve b ?+? 10% 10%-\-f 0% >2a/ns 0% b(off) figure 2. resistive-load switching waveforms
BUV47, bu\m7a npn silicon power transistors parameter measurement information 33 a vgen 68 q vclamp=400v adjust pw to obtain lc for lc < 6 a vcc = 50 v forlc>6a vcc = 100v 100 n be(off) figure 3. inductive-load switching test circuit 'b(on) a - b = tsv b - c = trv d - e = i,; e - f = tti b - e = t,n a (90%) base current c-f-90% ce b ?/- 10% collector voltage d (90%) 'c(on) e (10%) collector current f (2%) notes: a. waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, rin > 10 ft cin < 11.5 pf. b. resistors must be noninductive types. figure 4. inductive-load switching waveforms
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